Gunther RoelkensUtsav D. DaveAlban GassenqNannicha HattasanChen HuBart KuykenFrançois LéoAditya MalikMuhammad MuneebEva RyckeboerSarah UvinZeger HensRoel BaetsYosuke ShimuraFederica GencarelliBenjamin VincentRoger LooJoris Van CampenhoutL. CeruttiJean‐Baptiste RodriguezE. TourniéXia ChenMiloš NedeljkovićGoran Z. MashanovichLi ShenN. HealyAnna C. PeacockXiaoping LiuRichard M. OsgoodWilliam H. Green
In this paper we discuss silicon-based photonic integrated circuit technology for applications beyond the telecommunication wavelength range. Silicon-on-insulator and germanium-on-silicon passive waveguide circuits are described, as well as the integration of III-V semiconductors, IV-VI colloidal nanoparticle films and GeSn alloys on these circuits for increasing the functionality. The strong nonlinearity of silicon combined with the low nonlinear absorption in the mid-infrared is exploited to generate picosecond pulse based supercontinuum sources and optical parametric oscillators that can be used as spectroscopic sensor sources.
Graham T. ReedMiloš NedeljkovićJordi Soler PenadésVinita MittalGanapathy Senthil MuruganAli Z. KhokharCallum G. LittlejohnsS. StankovićAlejandro Ortega‐MoñuxJ. Gonzalo Wangüemert‐PérezRobert HalirÍñigo Molina‐FernándezCarlos Alonso‐RamosDaniel BenedikovičAsier VillafrancaPavel ChebenJason J. AckertAndrew P. KnightsJames S. WilkinsonGoran Z. Mashanovich
Alexander SpottEric J. StantonNicolas VoletJonathan PetersJ. R. MeyerJohn E. Bowers