3.75 MeV electron irradiation of III-V concentrator tandem cells

Abstract

3.75 MeV electron irradiation of LPE-grown AlGaAs/GaAs monolithic two-terminal tandem solar cells was studied. In addition, Al/sub 0.35/Ga/sub 0.65/As and GaAs single-junction cells with various junction depths prepared to simulate the top and bottom cells of the tandems were irradiated. The cell degradation was characterized by spectral response and by illuminated current-voltage measurements. The degradation of minority-carrier diffusion length were measured on the AlGaAs and GaAs structures for optimization of the tandem solar cells.