Sensitization of the 1.54μm Er emission in amorphous silicon nitride films

Selçuk Yerci; Rui Li; Soumendra N. Basu; Luca Dal Negro

doi:10.1109/group4.2009.5338293

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Sensitization of the 1.54μm Er emission in amorphous silicon nitride films

Selçuk Yerci Rui Li Soumendra N. Basu Luca Dal Negro

Year: 2009 Vol: 69 Pages: 52-54

DOI: 10.1109/group4.2009.5338293

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Abstract

We report on the fabrication, structural and optical properties of Er doped amorphous silicon nitride. The effect of excess Si on the sensitization of the 1.54 μm Er emission will be discussed.

Keywords:

Fabrication Silicon nitride Amorphous solid Nitride Materials science Sensitization Amorphous silicon Optoelectronics Amorphous semiconductors Doping Silicon Nanotechnology Crystalline silicon Crystallography Chemistry

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Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

Sensitization of the 1.54μm Er emission in amorphous silicon nitride films

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