The Structural and Optical Properties of Self-assembled InGaN/GaN Quantum Dots Grown by Molecular Beam Epitaxy

JOURNAL ARTICLE

Year: 2006 Journal: MRS Proceedings Vol: 955 Publisher: Cambridge University Press

DOI: 10.1557/proc-0955-i07-28

Keywords:

Materials science Molecular beam epitaxy Optoelectronics Quantum dot Nanotechnology Epitaxy Layer (electronics)

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