DEPOSITION OF M—C (M = Cr, Mn, Fe) FILMS BY MAGNETRON SPUTTERING

Abstract

Thin films of M — C ( M = Cr , Mn , Fe ) have been deposited on silicon substrates by magnetron sputtering. It was found that interdiffusion between carbide films and silicon substrates occurred for Mn — C/Si and Fe — C/Si samples. The hardness and elastic modulus of the Cr — C films were around 16 ± 1 GPa and 210 ± 21 GPa , respectively. Mn — C and Fe — C films were not so hard as Cr — C films. The resistivity of these films at room temperature was between 0.267 and 3.40 mΩ cm. The resistivity of Cr — C and Mn — C films changed a little with time at 673 K in air.