Investigation on PID-Resistant Anti-Reflection Coating for Crystaline Silicon Solar Cells

Abstract

Anti-reflection coating (ARC) on crystalline silicon solar cell plays an important role in preventing potential induced degradation (PID). It is reported that PID is suppressed with simply increasing the refractive index (RI) of silicon nitride (SiN) film as ARC. However, this method has a disadvantage in initial conversion efficiency because of dropping the optical confinement. In this paper, we report an investigation about PID-resistant ARC with keeping conventional RI. The module, which has an ARC deposited by a novel plasma enhanced chemical vapor deposition (PE-CVD) unit “MCXS” from Shimadzu Corporation, indicated high resistance to PID without optical confinement loss. We describe the electrical and chemical properties of the PID-resistant ARC.