JOURNAL ARTICLE

XPS study on band alignment at PtO‐terminated ZnO(0001) interface

Abstract

Abstract The band alignment at the interface between Pt and O‐terminated ZnO(000 1 ) was investigated by depositing Pt films on ZnO using X‐ray photoelectron spectroscopy and ultra violet photoelectron spectroscopy in an ultrahigh vacuum system. Angle‐resolved X‐ray photoelectron spectroscopy measurement showed the band was bent down by 0.06 eV at the ZnO(000 1 ) surface. The binding energy of Zn 2p doublet shifted toward higher values by 0.37 eV when Pt was deposited on ZnO(000 1 ). The work function of ZnO(000 1 ) was 4.08 eV and the valence band maximum measured by UPS on the clean ZnO(000 1 ) surface was 2.82 eV. As a result, the Schottky barrier height of Pt/ZnO(000 1 ) was 0.72 eV in this experiment. Copyright © 2010 John Wiley & Sons, Ltd.

Keywords:
X-ray photoelectron spectroscopy Schottky barrier Work function Analytical Chemistry (journal) Binding energy Schottky diode Materials science Valence band Bent molecular geometry Ultraviolet photoelectron spectroscopy Spectroscopy Vacuum level Platinum Chemistry Band gap Optoelectronics Layer (electronics) Atomic physics Nanotechnology Diode Nuclear magnetic resonance Physics

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13
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0.81
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Citation History

Topics

ZnO doping and properties
Physical Sciences →  Materials Science →  Materials Chemistry
Copper-based nanomaterials and applications
Physical Sciences →  Materials Science →  Materials Chemistry
Gas Sensing Nanomaterials and Sensors
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
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