Electrically Conducting Pb _y O _x –SiO ₂ Glass Films Deposited by Reactive Radio‐Frequency Magnetron Sputtering

Abstract

Lead silicate glass films were deposited on sapphire substrates in different plasmas (100% Ar; 20% H 2 + 80% Ar; 5% O 2 + 95% Ar) by reactive radio‐frequency magnetron sputtering. The stoichiometry of the films, determined by Rutherford backscattering spectroscopy, changed with the deposition conditions. X‐ray diffractometry analysis showed the presence of metallic Pb in the samples sputtered in H 2 ‐containing plasma. The room‐temperature sheet resistance of the films ranged from >10 16 Ω/□ (O 2 ‐containing atmosphere) to about 10 3 Ω/□ (H 2 ‐containing atmosphere).