The phase shifting mask is a two-layer engineered structure that improves the resolution of microlithography by between 25% and 100% by using interference to cancel some diffraction effects1,2. Although invented in 1980, this technology has only recently become prominent, mostly because of its potential to produce 16 Mb and 64 Mb DRAM with current i-line projection tools3,4. In the long run, phase-shifting masks may be used with deep-UV steppers to make structures with critical dimensions down to 0.15 micrometer.
Christophe PierratJohn J. DeMarco
Naoyuki IshiwataTakao Furukawa
David M. NewmarkAndrew R. Neureuther
Kevin LucasAndrzej J. StrojwasHiroyoshi Tanabe
Satoshi TanakaHiroko NakamuraKenji KawanoSoichi Inoue