Recent progress in the development of 9xx and 808 nm high power laser diode bars and the application in a laser head with line focus for crystallization of silicon thin films is reported.
Nobuto KageyamaTakenori MoritaK. ToriiMotoki TakaujiTakehito NagakuraJunya MaedaHirofumi MiyajimaHarumasa Yoshida
P. CrumpC. FrevertH. HöslerF. BuggeS. KniggeW. PittroffG. ErbertG. Tränkle
Y. M. ManzM. KrejčíStefan WeißA. ThiesDaniel S. SchulzA. FilyN. Lichtenstein
M. MikullaM. WaltherRudolf KieferJ. JandeleitWolfgang BrandenburgPeter LoosenReinhart PopraweG. Weimann