Surface Transfer Doping‐Induced, High‐Performance Graphene/Silicon Schottky Junction‐Based, Self‐Powered Photodetector

Abstract

A remarkable performance enhancement of Gr/Si junction-based self-powered photodetectors is demonstrated via surface modification with a MoO3 thin film. The external quantum efficiency of the Gr/Si device is significantly enhanced up to ≈80% by almost four times in the visible light region, which can be attributed to the increased Schottky barrier height and the reduced series resistance of Gr/Si device after MoO3 modification.