Dielectric properties of Ta2O5 films grown on silicon substrates plasma nitrided in N2O

N. Novkovski; E. Atanassova

doi:10.1007/s00339-004-3019-x

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Dielectric properties of Ta2O5 films grown on silicon substrates plasma nitrided in N2O

N. Novkovski E. Atanassova

Year: 2004 Journal: Applied Physics A Vol: 81 (6)Pages: 1191-1195 Publisher: Springer Science+Business Media

DOI: 10.1007/s00339-004-3019-x

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Keywords:

Silicon Materials science Quantum tunnelling Silicon oxynitride Strained silicon Leakage (economics) Dielectric Plasma Field electron emission Optoelectronics Electron Condensed matter physics Silicon nitride Crystalline silicon

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Dielectric properties of Ta2O5 films grown on silicon substrates plasma nitrided in N2O

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