JOURNAL ARTICLE

Dielectric properties of Ta2O5 films grown on silicon substrates plasma nitrided in N2O

N. NovkovskiE. Atanassova

Year: 2004 Journal:   Applied Physics A Vol: 81 (6)Pages: 1191-1195   Publisher: Springer Science+Business Media
Keywords:
Silicon Materials science Quantum tunnelling Silicon oxynitride Strained silicon Leakage (economics) Dielectric Plasma Field electron emission Optoelectronics Electron Condensed matter physics Silicon nitride Crystalline silicon

Metrics

12
Cited By
0.89
FWCI (Field Weighted Citation Impact)
8
Refs
0.77
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

Semiconductor materials and devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Advancements in Semiconductor Devices and Circuit Design
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Silicon Nanostructures and Photoluminescence
Physical Sciences →  Materials Science →  Materials Chemistry

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