Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering

Zhihao Yu; Yiming Pan; Yuting Shen; Zilu Wang; Zhun‐Yong Ong; Tao Xu; Run Xin; Lijia Pan; Baigeng Wang; Litao Sun; Jinlan Wang; Gang Zhang; Yong‐Wei Zhang; Yi Shi; Xinran Wang

doi:10.1038/ncomms6290

JOURNAL ARTICLE

Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering

Zhihao Yu Yiming Pan Yuting Shen Zilu Wang Zhun‐Yong Ong Tao Xu Run Xin Lijia Pan Baigeng Wang Litao Sun Jinlan Wang Gang Zhang Yong‐Wei Zhang Yi Shi Xinran Wang

Year: 2014 Journal: Nature Communications Vol: 5 (1)Pages: 5290-5290 Publisher: Nature Portfolio

DOI: 10.1038/ncomms6290

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Keywords:

Molybdenum disulfide Monolayer Transistor Materials science Molybdenum Impurity Semiconductor Chemical physics Electron mobility Charge (physics) Optoelectronics Nanotechnology Chemistry Voltage Physics Organic chemistry

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Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering

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