Synthesis, characterization and field-emission properties of bamboo-like β-SiC nanowires

Abstract

Single-crystalline bamboo-like beta-SiC nanowires with hexagonal cross-sections were synthesized by thermal evaporation of mixed SiO+C+GaN powders in an Ar atmosphere. The as-synthesized nanowires were studied by x-ray diffraction, scanning electron microscopy and transmission electron microscopy. Studies found that the as-synthesized SiC nanowires are composed of hexagonal stems decorated with larger diameter knots along their whole length with the [Formula: see text] growth direction. The growth of bamboo-like SiC nanowires is governed by the vapour-liquid-solid mechanism. Field-emission properties of the peculiar nanostructures were also explored, showing a turn-on field of about 10.1 V microm(-1).