Dissociation of Misfit Dislocations in GeSi/{111}Si Interfaces

F. Ernst

doi:10.1557/proc-319-165

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Dissociation of Misfit Dislocations in GeSi/{111}Si Interfaces

F. Ernst

Year: 1993 Journal: MRS Proceedings Vol: 319 Publisher: Cambridge University Press

DOI: 10.1557/proc-319-165

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Keywords:

Materials science High-resolution transmission electron microscopy Stacking Epitaxy Condensed matter physics Crystallography Partial dislocations Dissociation (chemistry) Lattice (music) Transmission electron microscopy Dislocation Chemical physics Nanotechnology Composite material Layer (electronics) Nuclear magnetic resonance

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Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Dissociation of Misfit Dislocations in GeSi/{111}Si Interfaces

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