Abstract

In this paper, an ultra-low-voltage charge pump is presented. Two techniques are used to reduce required number of stages and improve power efficiency, namely clock boosting and V t cancellation. Clock boosting is employed to increase the output voltage per stage resulting in lower number of stages, and hence smaller output resistance. V t cancellation is achieved by using an auxiliary circuit that enables the charge pump to operate at input voltages as low as 300mV. Compared to conventional charge pump techniques, the proposed technique is shown to offer higher power efficiency and voltage gain. The charge pump is designed using TSMC 0.25μm CMOS technology.

Keywords:
Charge pump Boosting (machine learning) Voltage CMOS Electrical engineering Power (physics) Charge (physics) Physics Computer science Capacitor Materials science Electronic engineering Optoelectronics Engineering Artificial intelligence Particle physics Quantum mechanics

Metrics

19
Cited By
2.51
FWCI (Field Weighted Citation Impact)
5
Refs
0.89
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

Innovative Energy Harvesting Technologies
Physical Sciences →  Engineering →  Mechanical Engineering
Advanced Thermoelectric Materials and Devices
Physical Sciences →  Materials Science →  Materials Chemistry
Energy Harvesting in Wireless Networks
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
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