Photoconductivity of ambipolar long-channel carbon-nanotube field-effect transistors

Chi‐Ti Hsieh; D. S. Citrina; P. P. Ruden

doi:10.1109/cleo.2008.4552170

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Photoconductivity of ambipolar long-channel carbon-nanotube field-effect transistors

Chi‐Ti Hsieh D. S. Citrina P. P. Ruden

Year: 2008 Pages: 1-2

DOI: 10.1109/cleo.2008.4552170

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Abstract

The photocurrents of carbon-nanotube field-effect transistors are small due to the small exciton ionization rate and large exciton nonradiative-decay rate, and the photocurrent gain is small for the long-channel devices.

Keywords:

Ambipolar diffusion Photocurrent Photoconductivity Exciton Carbon nanotube Optoelectronics Materials science Field-effect transistor Impact ionization Transistor Ionization Carbon nanotube quantum dot Carbon nanotube field-effect transistor Nanotube Nanotechnology Condensed matter physics Physics Plasma Ion

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Carbon Nanotubes in Composites

Physical Sciences → Materials Science → Materials Chemistry

Mechanical and Optical Resonators

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Diamond and Carbon-based Materials Research

Physical Sciences → Materials Science → Materials Chemistry

Photoconductivity of ambipolar long-channel carbon-nanotube field-effect transistors

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