High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers

Daniil I. Nikitichev; Yiming Ding; M. Ruiz; M. Calligaro; N. Michel; Michael Krakowski; I. Krestnikov; D. Livshits; Maria Ana Cataluna; Edik U. Rafailov

doi:10.1007/s00340-010-4290-5

JOURNAL ARTICLE

High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers

Daniil I. Nikitichev Yiming Ding M. Ruiz M. Calligaro N. Michel Michael Krakowski I. Krestnikov D. Livshits Maria Ana Cataluna Edik U. Rafailov

Year: 2010 Journal: Applied Physics B Vol: 103 (3)Pages: 609-613 Publisher: Springer Science+Business Media

DOI: 10.1007/s00340-010-4290-5

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Keywords:

Laser Materials science Picosecond Optoelectronics Optics Quantum dot laser Diode Semiconductor laser theory Mode-locking Quantum dot Laser beam quality Quantum well Physics Laser beams

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Semiconductor Lasers and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advanced Fiber Laser Technologies

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers

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