Electron traps in ZnSe grown by liquid-phase epitaxy

K. Kosai

doi:10.1063/1.330511

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Electron traps in ZnSe grown by liquid-phase epitaxy

K. Kosai

Year: 1982 Journal: Journal of Applied Physics Vol: 53 (2)Pages: 1018-1022 Publisher: American Institute of Physics

DOI: 10.1063/1.330511

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Abstract

Deep electron levels in n-type liquid phase epitaxial ZnSe have been studied using thermally stimulated capacitance, photocapacitance, and deep level transient spectroscopy (DLTS). Electron traps have been observed with activation energies of 0.17, ∼0.3, 0.64, and 1.4 eV below the conduction band. The electron emission-rate dependence on temperature as measured by DLTS has been found to vary among samples for the 0.3 eV level.

Keywords:

Deep-level transient spectroscopy Epitaxy Conduction band Capacitance Electron Materials science Phase (matter) Analytical Chemistry (journal) Activation energy Liquid phase Penning trap Chemistry Optoelectronics Silicon Physical chemistry Electrode Nanotechnology Physics

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Chalcogenide Semiconductor Thin Films

Physical Sciences → Engineering → Electrical and Electronic Engineering

Quantum Dots Synthesis And Properties

Physical Sciences → Materials Science → Materials Chemistry

Electron and X-Ray Spectroscopy Techniques

Physical Sciences → Materials Science → Surfaces, Coatings and Films

Electron traps in ZnSe grown by liquid-phase epitaxy

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