Initial stages of SiGe epitaxy on Si(001) studied by scanning tunneling microscopy

Ahmet Oral; R. Ellialtıoğlu

doi:10.1016/0039-6028(94)00666-0

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Initial stages of SiGe epitaxy on Si(001) studied by scanning tunneling microscopy

Ahmet Oral R. Ellialtıoğlu

Year: 1995 Journal: Surface Science Vol: 323 (3)Pages: 295-303 Publisher: Elsevier BV

DOI: 10.1016/0039-6028(94)00666-0

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Keywords:

Overlayer Scanning tunneling microscope Substrate (aquarium) Silicon Materials science Epitaxy Layer (electronics) Crystallography Optoelectronics Chemistry Nanotechnology Geology Physical chemistry

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Surface and Thin Film Phenomena

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Force Microscopy Techniques and Applications

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Initial stages of SiGe epitaxy on Si(001) studied by scanning tunneling microscopy

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