Oxygen vacancy enhanced the room temperature ferromagnetism in Ni-doped TiO2 thin films

Denglu Hou; Hao Meng; Liyun Jia; X.J. Ye; H. J. Zhou; Xingliang Li

doi:10.1016/j.physleta.2006.11.077

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Oxygen vacancy enhanced the room temperature ferromagnetism in Ni-doped TiO2 thin films

Denglu Hou Hao Meng Liyun Jia X.J. Ye H. J. Zhou Xingliang Li

Year: 2006 Journal: Physics Letters A Vol: 364 (3-4)Pages: 318-322 Publisher: Elsevier BV

DOI: 10.1016/j.physleta.2006.11.077

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Keywords:

Ferromagnetism Doping Thin film Anatase Annealing (glass) Magnetism Sputter deposition Condensed matter physics Oxygen Sputtering Materials science Physics Nanotechnology Metallurgy Chemistry Photocatalysis Catalysis

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ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Gas Sensing Nanomaterials and Sensors

Physical Sciences → Engineering → Electrical and Electronic Engineering

Electronic and Structural Properties of Oxides

Physical Sciences → Materials Science → Materials Chemistry

Oxygen vacancy enhanced the room temperature ferromagnetism in Ni-doped TiO2 thin films

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