GaAlAs Schottky directional-coupler switch

Abstract

Electro-optic metal-gap directional-coupler switches have been fabricated in GaAlAs waveguide structures. A very thin GaAs cap facilitates the electroplating of Schottky barriers without significantly increasing the optical attenuation at wavelengths near 8600 Å, making this type of device suitable for integration with a GaAs laser source on a common chip. The performance of the switch was investigated at 1.06 m. A 17-dB extinction ratio in the coupled channel was measured at a reverse-bias voltage of 25 V.