Preparation and Properties of Self-Bonded Silicon Carbide

Abstract

The preparation and properties of self-bonded silicon carbide (SBSC) are presented. The properties include Young's modulus (E), bulk modulus (μ), rigidity modulus (K), Poisson's ratio (σ) and electrical resistivity (ρ). E, μ and K for SBSC rods pressed at 76 MN.m−2 were found to be 0.329, 0.422 and 0.122 GN.m−2 respectively and ρ for the above rods varied from 0.42 to 0.22 ohm.cm at room temperature and 1000°C respectively with a minimum at 600°C.