ScienceGate Book Chapters
JOURNAL ARTICLE

Damage characteristics of n-GaN thin film surfaces etched by ultraviolet light-assisted helium plasmas

Retsuo KawakamiMasahito NiibeYoshitaka NakanoT. ShirahamaKazuma AokiKenta ObaMari TakabatakeTakashi Mukai

Year: 2014 Journal:   Thin Solid Films Vol: 570 Pages: 81-86   Publisher: Elsevier BV
DOI: 10.1016/j.tsf.2014.09.019
   Get Full-Text PDF    Get Analytical Report
Keywords:
Irradiation Plasma Etching (microfabrication) Ultraviolet Ultraviolet light Materials science Plasma etching Helium Wavelength Analytical Chemistry (journal) Chemistry Optoelectronics Nanotechnology Layer (electronics)

Metrics

5
Cited By
0.81
FWCI (Field Weighted Citation Impact)
41
Refs
0.78
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

GaN-based semiconductor devices and materials
Physical Sciences →  Physics and Astronomy →  Condensed Matter Physics
Plasma Diagnostics and Applications
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Metal and Thin Film Mechanics
Physical Sciences →  Engineering →  Mechanics of Materials

Related Documents

JOURNAL ARTICLE

Damage characteristics of n‐GaN thin film surfaces etched by N2 plasmas

Retsuo KawakamiMasahito NiibeYoshitaka NakanoT. ShirahamaTetsuya YamadaKazuma AokiMari TakabatakeKikuo TominagaTakashi Mukai

Journal:   Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics Year: 2013 Vol: 10 (11)Pages: 1553-1556
JOURNAL ARTICLE

Damage Characteristics of TiO2Thin Film Surfaces Etched by Capacitively Coupled Radio Frequency Helium Plasmas

Retsuo KawakamiAtsushi TakeichiMasahito NiibeTakeshi InaokaKikuo Tominaga

Journal:   Japanese Journal of Applied Physics Year: 2011 Vol: 50 (8S2)Pages: 08KD01-08KD01
JOURNAL ARTICLE

Damage Characteristics of TiO2 Thin Film Surfaces Etched by Capacitively Coupled Radio Frequency Helium Plasmas

Retsuo KawakamiAtsushi TakeichiMasahito NiibeTakeshi InaokaKikuo Tominaga

Journal:   Japanese Journal of Applied Physics Year: 2011 Vol: 50 (8S2)Pages: 08KD01-08KD01
JOURNAL ARTICLE

Comparison between Damage Characteristics of p- and n-GaN Surfaces Etched by Capacitively Coupled Radio Frequency Argon Plasmas

Retsuo KawakamiMasahito NiibeYoshitaka NakanoMasashi KonishiYuta MoriAtsushi TakeichiKikuo TominagaTakashi Mukai

Journal:   Japanese Journal of Applied Physics Year: 2013 Vol: 52 (5S2)Pages: 05EC05-05EC05
JOURNAL ARTICLE

Damage Analysis of n-GaN Crystal Etched with He and N2 Plasmas

Masahito NiibeTakuya KotakaRetsuo KawakamiYoshitaka NakanoTakeshi InaokaKikuo TominagaTakashi Mukai

Journal:   Japanese Journal of Applied Physics Year: 2013 Vol: 52 (1S)Pages: 01AF04-01AF04
© 2026 ScienceGate Book Chapters — All rights reserved.