Quantum-tailored solid-state devices

Abstract

Techniques that allow semiconductor crystals to be grown on one layer at a time are described, and the potential they offer for tailoring device characteristics precisely by controlling the band gap is discussed. Three tools used to accomplish this are examined: alloying, which changes a semiconductor's chemical composition; the juxtaposition of heterogeneous materials to form heterojunctions; and the introduction of mechanical strain between crystal layers. Band-gap engineering of optical devices is given particular attention.< >