JOURNAL ARTICLE

Electrical properties of single crystals of antimony-doped stannic oxide

D. F. MorganD A Wright

Year: 1966 Journal:   British Journal of Applied Physics Vol: 17 (3)Pages: 337-340   Publisher: IOP Publishing

Abstract

Single crystals of stannic oxide heavily doped with antimony have been grown from tin vapour and oxygen at 1450°c. Their electrical properties have been studied between 77 and 1100°K. These can be interpreted in terms of optical mode lattice scattering at the higher temperatures, with an impurity scattering contribution below about 300°K. Combining the Hall and Seebeck coefficients leads to an average electron effective mass of 0·13 m0.

Keywords:
Antimony Impurity Scattering Doping Materials science Tin oxide Oxide Condensed matter physics Electrical resistivity and conductivity Hall effect Lattice (music) Tin Antimony oxide Analytical Chemistry (journal) Inorganic chemistry Chemistry Metallurgy Optics Optoelectronics Physics

Metrics

43
Cited By
1.66
FWCI (Field Weighted Citation Impact)
10
Refs
0.83
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

Electronic and Structural Properties of Oxides
Physical Sciences →  Materials Science →  Materials Chemistry
Magnetic and transport properties of perovskites and related materials
Physical Sciences →  Materials Science →  Electronic, Optical and Magnetic Materials
Advanced Chemical Physics Studies
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics

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