JOURNAL ARTICLE

Electrical properties and microstructures of Au/Pt/Ti/Ni ohmic contacts to p-type ZnTe

Kazuhiro MochizukiAkihisa TeranoMasayuki MomoseA. TaikeMasahiko KawataJun GotohShin‐ichi Nakatsuka

Year: 1995 Journal:   Applied Physics Letters Vol: 67 (1)Pages: 112-114   Publisher: American Institute of Physics

Abstract

Electrical properties and microstructures of Au/Pt/Ti/Ni ohmic contacts to p-type ZnTe were investigated using the transmission line model method and cross-sectional transmission electron microscopy. The specific contact resistance decreases when the annealing temperature is increased and reaches a minimum at 300 °C. The formation of NiTe2 from the reaction between Ni and ZnTe plays an important role in lowering the contact resistance. A contact stability test performed at 102 °C suggests that these ohmic contacts are stable even under high-current injection.

Keywords:
Ohmic contact Contact resistance Materials science Microstructure Annealing (glass) Transmission electron microscopy Electrical contacts Metallurgy Analytical Chemistry (journal) Optoelectronics Nanotechnology Chemistry

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Topics

Semiconductor materials and interfaces
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
Chalcogenide Semiconductor Thin Films
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Semiconductor Quantum Structures and Devices
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics

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