Preparation and characterization of MOCVD thin films of indium tin oxide

Olumide Oluwole Akinwunmi; Marcus Adebola Eleruja; J. O. Olowolafe; G. A. Adegboyega; E.O.B. Ajayi

doi:10.1016/s0925-3467(98)00089-5

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Preparation and characterization of MOCVD thin films of indium tin oxide

Olumide Oluwole Akinwunmi Marcus Adebola Eleruja J. O. Olowolafe G. A. Adegboyega E.O.B. Ajayi

Year: 1999 Journal: Optical Materials Vol: 13 (2)Pages: 255-259 Publisher: Elsevier BV

DOI: 10.1016/s0925-3467(98)00089-5

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Keywords:

Indium Indium tin oxide Metalorganic vapour phase epitaxy Thin film Tin Materials science Band gap Electrical resistivity and conductivity Pyrolysis Oxide Characterization (materials science) Transparent conducting film Metal Chemical vapor deposition Deposition (geology) Inorganic chemistry Analytical Chemistry (journal) Optoelectronics Chemical engineering Nanotechnology Chemistry Metallurgy Layer (electronics) Epitaxy

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ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Transition Metal Oxide Nanomaterials

Physical Sciences → Materials Science → Polymers and Plastics

Preparation and characterization of MOCVD thin films of indium tin oxide

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