JOURNAL ARTICLE

Preparation of hydrogenated amorphous silicon tin alloys

M. VergnatG. MarchalM. Piécuch

Year: 1987 Journal:   Revue de Physique Appliquée Vol: 22 (12)Pages: 1803-1808   Publisher: EDP Sciences

Abstract

This paper describes a new method to obtain hydrogenated amorphous semiconductor alloys. The method is reactive co-evaporation. Silicon tin hydrogenated alloys are prepared under atomic hydrogen atmosphere. We discuss the influence of various parameters of preparation (hydrogen pressure, tungsten tube temperature, substrate temperature, annealing...) on electrical properties of samples.

Keywords:
Materials science Tin Silicon Annealing (glass) Tungsten Amorphous solid Amorphous silicon Hydrogen Metallurgy Evaporation Substrate (aquarium) Chemical engineering Semiconductor Crystalline silicon Optoelectronics Chemistry Crystallography

Metrics

13
Cited By
2.27
FWCI (Field Weighted Citation Impact)
10
Refs
0.89
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

Thin-Film Transistor Technologies
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Transition Metal Oxide Nanomaterials
Physical Sciences →  Materials Science →  Polymers and Plastics

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