EBIC characterization of strained Si/SiGe heterostructures

Abstract

Strained-Si/SiGe heterostructure is studied by EBIC. The effect of annealing at 800°C is investigated. The EBIC images obtained at different beam energies are analyzed. The analysis of images obtained shows that misfit dislocation bunches in the graded SiGe layer could not explain the cross-hatch contrast dependence on E b. Therefore, at least a part of this contrast should be associated with other defects located closer to the depletion region. It is assumed that dislocation trails could play the role of such defects.