A low noise CMOS readout front end for MEMs BioPotential sensor applications

Abstract

In this paper, a low-noise CMOS readout front end for biopotential acquisition applications is presented. The proposed circuit, implemented using 130 nm standard CMOS process, has a thermal noise floor of 10 nV/√Hz, a corner frequency of 300 mHz, and dissipates 3.2μW of power when powered using a 1 V supply. The designed circuit occupies a die area of 0.007mm ² and thus renders itself as an excellent candidate for acquiring biopotential signals through MEMS sensors.