Electronic Structure of Zinc‐Blende Ga x Al 1– x N Alloys

J. Arriaga; H. Hernández‐Cocoletzi; D. A. Contreras‐Solorio; Marcelo del Castillo‐Mussot

doi:10.1002/pssc.200390034

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Electronic Structure of Zinc‐Blende Ga _x Al _{1– x} N Alloys

J. Arriaga H. Hernández‐Cocoletzi D. A. Contreras‐Solorio Marcelo del Castillo‐Mussot

Year: 2002 Journal: Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics Pages: 244-247 Publisher: Wiley

DOI: 10.1002/pssc.200390034

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Abstract

We calculate the electronic structure of cubic GaxAl1–xN alloys. We used an empirical tight-binding Hamiltonian with an sp3s* orbital basis up to second-neighbour interactions including the spin–orbit splitting. We report the evolution of the band gap alloy for the whole range of x concentration.

Keywords:

Electronic structure Tight binding Hamiltonian (control theory) Alloy Condensed matter physics Band gap Zinc Materials science Electronic band structure Crystallography Chemistry Physics Metallurgy Mathematics

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

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Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

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Physical Sciences → Materials Science → Materials Chemistry

Electronic Structure of Zinc‐Blende Ga _x Al _{1– x} N Alloys

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