Annealing effects on titanium dioxide films by Sol-Gel spin coating method

Abstract

TiO ₂ thin films were deposited on silicon dioxide substrates using a sol-gel method. The surface morphologies, structural and electrical properties at different annealing temperatures were studied using atomic force microscopy (AFM), X-ray diffraction (XRD) and Kiethley 6485 pico-ammeter. The XRD pattern displayed the presence of anatase and rutile structures even at low temperature while AFM displayed that the annealing temperature affects the particle size. Current-voltage (I-V) characteristic revealed that the conductivity decreased as the annealing temperature varied from 300 to 900 ^o C.