LPCVD-silicon oxynitride films: low-temperature annealing effects

S. Alexandrova; A. Szekeres; E Halova; M. Modreanu

doi:10.1016/s0042-207x(02)00363-9

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LPCVD-silicon oxynitride films: low-temperature annealing effects

S. Alexandrova A. Szekeres E Halova M. Modreanu

Year: 2002 Journal: Vacuum Vol: 69 (1-3)Pages: 385-389 Publisher: Elsevier BV

DOI: 10.1016/s0042-207x(02)00363-9

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Keywords:

Silicon oxynitride Materials science Annealing (glass) Chemical vapor deposition Silicon Optoelectronics Engineering physics Composite material Silicon nitride Engineering

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

LPCVD-silicon oxynitride films: low-temperature annealing effects

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