Trap distribution in amorphous Ge-Se-Ga thin films

W. Mycielski; Adeline Lach; A. Lipiński; M. Mitkova; Z. Boncheva-Mladenova

doi:10.1016/0040-6090(81)90002-x

ScienceGate Book Chapters

JOURNAL ARTICLE

Trap distribution in amorphous Ge-Se-Ga thin films

W. Mycielski Adeline Lach A. Lipiński M. Mitkova Z. Boncheva-Mladenova

Year: 1981 Journal: Thin Solid Films Vol: 84 (1)Pages: L177-L179 Publisher: Elsevier BV

DOI: 10.1016/0040-6090(81)90002-x

Get Full-Text PDF Get Analytical Report

Keywords:

Thermionic emission Gallium Amorphous solid Thin film Materials science Effective mass (spring–mass system) Analytical Chemistry (journal) Gallium oxide Electron Condensed matter physics Atomic physics Chemistry Nanotechnology Physics Crystallography Metallurgy Nuclear physics

Metrics

Cited By

0.47

FWCI (Field Weighted Citation Impact)

Refs

0.63

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Topics

Phase-change materials and chalcogenides

Physical Sciences → Materials Science → Materials Chemistry

Chalcogenide Semiconductor Thin Films

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Trap distribution in amorphous Ge-Se-Ga thin films

Metrics

Topics

Related Documents

Stress investigations of thin amorphous Ge-Se-Ga films

Stress formation in evaporated amorphous Ge–Se and Ge–Se–Ga(Tl, B) thin films

Memory switching in amorphous Ge-S-Ga thin films

Electrical Properties of Amorphous Pb-Ge-Se Thin Films

Optical properties of amorphous As–Se and Ge–As–Se thin films