Intersubband Transitions In Ingaas/Inalas Multiple Quantum Wells Grown On Inp Substrate

Qiaoying Zhou; M. O. Manasreh; B. D. Weaver; M. Missous

doi:10.1557/proc-692-h6.25.1

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Intersubband Transitions In Ingaas/Inalas Multiple Quantum Wells Grown On Inp Substrate

Qiaoying Zhou M. O. Manasreh B. D. Weaver M. Missous

Year: 2001 Journal: MRS Proceedings Vol: 692 Publisher: Cambridge University Press

DOI: 10.1557/proc-692-h6.25.1

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Keywords:

Quantum well Materials science Photoluminescence Excited state Optoelectronics Absorption edge Conduction band Condensed matter physics Infrared Absorption (acoustics) Absorption spectroscopy Spectral line Band gap Optics Atomic physics Physics Laser

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor Lasers and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advanced Semiconductor Detectors and Materials

Physical Sciences → Engineering → Electrical and Electronic Engineering

Intersubband Transitions In Ingaas/Inalas Multiple Quantum Wells Grown On Inp Substrate

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