JOURNAL ARTICLE

Epitaxial Growth of Vertically Aligned and Branched Single‐Crystalline Tin‐Doped Indium Oxide Nanowire Arrays

Abstract

Epitaxial growth of well-aligned tin-doped indium oxide (ITO) nanowire arrays on substrates of (100) yttrium-stabilized zirconia with vertical and inclined orientations is reported. Branched ITO nanowires are grown on (100) ITO nanowire backbones by a second step of Au-catalyzed vapor–liquid–solid growth. The Figure shows ITO nanowire branches grown parallel to one another on each side of an ITO nanowire backbone. Supporting information for this article is available on the WWW under http://www.wiley-vch.de/contents/jc_2089/2006/c1673_s.pdf or from the author. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.

Keywords:
Nanowire Materials science Epitaxy Indium tin oxide Indium Doping Yttrium Nanotechnology Tin Oxide Optoelectronics Thin film Layer (electronics) Metallurgy

Metrics

123
Cited By
5.05
FWCI (Field Weighted Citation Impact)
24
Refs
0.96
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

ZnO doping and properties
Physical Sciences →  Materials Science →  Materials Chemistry
Electronic and Structural Properties of Oxides
Physical Sciences →  Materials Science →  Materials Chemistry
Gas Sensing Nanomaterials and Sensors
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
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