Microstructure Control of Absorber Sb₂S₃ and p-Type Semiconductor CuSCN for Semiconductor-Sensitized Solar Cells (TiO₂/Sb₂S₃/CuSCN)

Abstract

Semiconductor-sensitized solar cells (SSSCs) were fabricated with a planar n-type TiO2 film, an antimony sulfide (Sb2S3) thin film as the absorber, and a transparent p-type CuSCN film. The deposition amount of Sb2S3 and the pn junction interface condition significantly affected the generation and recombination of photo carriers. Analysis of the microstructure and chemical state of the Sb2S3, and the microstructure of CuSCN films showed that the homogeneity of the Sb2S3 and CuSCN films, the oxidation of Sb2S3 and the CUSCN thickness determined the optimal amount of Sb2S3 and the highest photoelectric conversion efficiency. For the ETA solar cell with the highest photoelectric conversion efficiency (1.67%), Sb2S3 was deposited by sputtering (SP) and CuSCN by wiping (WI).