JOURNAL ARTICLE

EUV wavefront metrology system in EUVA

T. HasegawaChidane OuchiMasanobu HasegawaSeima KatoAkiyoshi SuzukiKatsumi SugisakiKatsuhiko MurakamiJun SaitoMasahito Niibe

Year: 2004 Journal:   Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE Vol: 5374 Pages: 797-797   Publisher: SPIE

Abstract

An Experimental extreme ultraviolet (EUV) interferometer (EEI) using an undulator as a light source was installed in New SUBARU synchrotron facility at Himeji Institute of Technology (HIT). The EEI can evaluate the five metrology methods reported before. (1) A purpose of the EEI is to determine the most suitable method for measuring the projection optics of EUV lithography systems for mass production tools.

Keywords:
Extreme ultraviolet lithography Metrology Optics Extreme ultraviolet Wavefront Undulator Interferometry Lithography Physics Synchrotron Laser

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Citation History

Topics

Advancements in Photolithography Techniques
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Advanced X-ray Imaging Techniques
Physical Sciences →  Physics and Astronomy →  Radiation
Electron and X-Ray Spectroscopy Techniques
Physical Sciences →  Materials Science →  Surfaces, Coatings and Films

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