Physical aspects of a-Si:H/c-Si hetero-junction solar cells

M. Schmidt; Lars Korte; A. Laades; Rolf Stangl; Ch. Schubert; H. Angermann; E. Conrad; Karsten von Maydell

doi:10.1016/j.tsf.2006.11.087

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Physical aspects of a-Si:H/c-Si hetero-junction solar cells

M. Schmidt Lars Korte A. Laades Rolf Stangl Ch. Schubert H. Angermann E. Conrad Karsten von Maydell

Year: 2007 Journal: Thin Solid Films Vol: 515 (19)Pages: 7475-7480 Publisher: Elsevier BV

DOI: 10.1016/j.tsf.2006.11.087

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Keywords:

Doping Wafer Materials science X-ray photoelectron spectroscopy Analytical Chemistry (journal) Band gap Fermi level Solar cell Common emitter Surface photovoltage Amorphous solid Optoelectronics Silicon Chemistry Spectroscopy Crystallography Electron Physics Nuclear magnetic resonance

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Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Physical aspects of a-Si:H/c-Si hetero-junction solar cells

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