Reactions of Zr thin films with SiO2 substrates

Abstract

The reactions between Zr thin films and SiO2 substrates in the temperature range of 650–950 °C in vacuum have been studied by Rutherford backscattering spectrometry and glancing angle x-ray diffraction. A Zr-rich silicide, Zr5Si4, formed next to the SiO2 substrate and a surface layer of Zr oxide appeared on top of the Zr-rich silicide. The reaction was characterized by an activation energy, Ea =2.8 ±0.2 eV.