Fabrication and photoluminescence of bicrystalline SiC nanobelts

Abstract

SiC nanobelts have been synthesized by a reaction of Si and CNTS without catalysts using the simple evaporation method. The nanobelts display a unique bicrystalline structure that has growth directions, i.e. and , splitting along the twin boundary that exists at the centreline. The width of the nanobelts is in the range of 100–200 nm, the thickness ranging from 10 to 20 nm and their lengths are up to several tens of micrometres. The growth of bicrystalline SiC nanobelts follows the vapour–solid process. The photoluminescence spectrum of bicrystalline SiC nanobelts at room temperature shows a strong emission peak centred at 418 nm with a weak broad emission, based on which a possible emission mechanism is also discussed.