Effect of graphene/4H-SiC(0001) interface on electrostatic properties in graphene

Sushant Sonde; Carmelo Lo Vecchio; Filippo Giannazzo; Rositsa Yakimova; V. Raineri; E. Rimini

doi:10.1016/j.physe.2011.01.002

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Effect of graphene/4H-SiC(0001) interface on electrostatic properties in graphene

Sushant Sonde Carmelo Lo Vecchio Filippo Giannazzo Rositsa Yakimova V. Raineri E. Rimini

Year: 2011 Journal: Physica E Low-dimensional Systems and Nanostructures Vol: 44 (6)Pages: 993-996 Publisher: Elsevier BV

DOI: 10.1016/j.physe.2011.01.002

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Keywords:

Graphene Capacitance Materials science Quantum capacitance Graphene nanoribbons Local density of states Epitaxy Nanotechnology Optoelectronics Condensed matter physics Chemistry Physics Layer (electronics) Electrode Physical chemistry

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Graphene research and applications

Physical Sciences → Materials Science → Materials Chemistry

Advancements in Battery Materials

Physical Sciences → Engineering → Electrical and Electronic Engineering

Graphene and Nanomaterials Applications

Physical Sciences → Engineering → Biomedical Engineering

Effect of graphene/4H-SiC(0001) interface on electrostatic properties in graphene

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