Fabrication and electrical characterization of CdO/p-Si photosensors

R.H. Al Orainy; A.A. Hendi

doi:10.1016/j.mee.2014.02.014

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Fabrication and electrical characterization of CdO/p-Si photosensors

R.H. Al Orainy A.A. Hendi

Year: 2014 Journal: Microelectronic Engineering Vol: 127 Pages: 14-20 Publisher: Elsevier BV

DOI: 10.1016/j.mee.2014.02.014

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Keywords:

Materials science Photocurrent Optoelectronics Band gap Diode Doping Dopant Heterojunction Dark current Spin coating Photodetector Silicon Thin film Nanotechnology

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Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Chalcogenide Semiconductor Thin Films

Physical Sciences → Engineering → Electrical and Electronic Engineering

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Fabrication and electrical characterization of CdO/p-Si photosensors

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