N incorporation and electronic structure in N-doped TiO2(110) rutile

Sin Hang Cheung; P. Nachimuthu; Alan G. Joly; Mark Engelhard; Michael K. Bowman; Scott A. Chambers

doi:10.1016/j.susc.2007.01.051

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N incorporation and electronic structure in N-doped TiO2(110) rutile

Sin Hang Cheung P. Nachimuthu Alan G. Joly Mark Engelhard Michael K. Bowman Scott A. Chambers

Year: 2007 Journal: Surface Science Vol: 601 (7)Pages: 1754-1762 Publisher: Elsevier BV

DOI: 10.1016/j.susc.2007.01.051

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Keywords:

Rutile Materials science Electron cyclotron resonance Analytical Chemistry (journal) Doping Ion Crystallography Electron Molecular beam epitaxy Epitaxy Chemistry Nanotechnology Physics Optoelectronics

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Electronic and Structural Properties of Oxides

Physical Sciences → Materials Science → Materials Chemistry

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

N incorporation and electronic structure in N-doped TiO2(110) rutile

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