Molecular beam epitaxy ofp-hexaphenyl on GaAs(111)

Abstract

Hexaphenyl grows on GaAs(111) in elongated three-dimensional islands several micrometres long. The characteristic island shape (a drop-like or pyramidal head with a thinner tail) is demonstrated by atomic force microscopy. Using x-ray diffraction and transmission electron diffraction, the three-dimensional islands are found to be perfectly crystalline. On the basis of the bulk structure of hexaphenyl, three contact planes of hexaphenyl with GaAs(111) are identified: (312), (112) and (1001). These results suggest that the epitaxial hexaphenyl islands consist of differently orientated domains. It is shown that the techniques used are appropriate for the characterization of stable organic epitaxial islands. Copyright © 2000 John Wiley & Sons, Ltd.