In-Soo KimHo Him R. FokYuanyuan LiThomas N. JacksonBruce J. Gluckman
We developed an implantable thin film transistor temperature sensor (TFT-TS) to measure temperature changes in the brain. These changes are assumed to be associated with cerebral metabolism and neuronal activity. Two prototype TFT-TSs were designed and tested in-vitro: one with 8 diode-connected single-ended sensors, and the other with 4 pairs of differential-ended sensors in an array configuration. The sensor elements are 25 ~ 100 pm in width and 5 μm in length. The TFT-TSs were fabricated based on high-speed ZnO TFT process technology on flexible polyimide substrates (50 μm thick, 500 μm width, 20 mm length). In order to interface external signal electronics, they were directly bonded to a prototype printed circuit board using anisotropic conductive films The prototypes were characterized between 23 ~ 38 °C using a commercial temperature sensor and custom-designed temperature controlled oven. The maximum sensitivity of 40 mV/°C was obtained from the TFT-TS.
Bonnie Tingting ChiaD.-R. ChangHsin-Hung LiaoYao‐Joe YangWen‐Pin ShihFu-Yu ChangKuang–Chao Fan
Erin PatrickMatthew OrdonezNicolas AlbaJustin C. SanchezToshikazu Nishida
Erin PatrickMatthew OrdonezNicolas AlbaJustin C. SanchezToshikazu Nishida
Seung-Chul HaYoonseok YangYong Shin KimSoohyun KimYoung Jun KimSeong M. Cho
Huang, Wen-DingWang, JianqunAtivanichayaphong, ThermponChiao, MuChiao, J. C.