Constitutional supercooling in heavily As-doped Czochralski Si crystal growth

Toshinori Taishi; Yutaka Ohno; Ichiro Yonenaga

doi:10.1016/j.jcrysgro.2013.10.037

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Constitutional supercooling in heavily As-doped Czochralski Si crystal growth

Toshinori Taishi Yutaka Ohno Ichiro Yonenaga

Year: 2013 Journal: Journal of Crystal Growth Vol: 393 Pages: 42-44 Publisher: Elsevier BV

DOI: 10.1016/j.jcrysgro.2013.10.037

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Keywords:

Supercooling Czochralski method Doping Materials science Crystal growth Crystal (programming language) Silicon Crystallography Optoelectronics Chemistry Thermodynamics Physics Computer science

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Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Solidification and crystal growth phenomena

Physical Sciences → Materials Science → Materials Chemistry

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Constitutional supercooling in heavily As-doped Czochralski Si crystal growth

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