A modified Angelov model for InGaP/InGaAs enhancement- and depletion-mode pHEMTs using symbolic defined device technology

Chia-Shih Cheng; Yuan-Jui Shih; Hsien‐Chin Chiu

doi:10.1016/j.sse.2005.12.018

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A modified Angelov model for InGaP/InGaAs enhancement- and depletion-mode pHEMTs using symbolic defined device technology

Chia-Shih Cheng Yuan-Jui Shih Hsien‐Chin Chiu

Year: 2006 Journal: Solid-State Electronics Vol: 50 (2)Pages: 254-258 Publisher: Elsevier BV

DOI: 10.1016/j.sse.2005.12.018

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Keywords:

Mode (computer interface) Modulation (music) Optoelectronics Materials science Power (physics) Microwave High-electron-mobility transistor Nonlinear system Electronic engineering Physics Electrical engineering Computer science Engineering Telecommunications Transistor Acoustics Quantum mechanics Voltage

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Radio Frequency Integrated Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Photonic and Optical Devices

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A modified Angelov model for InGaP/InGaAs enhancement- and depletion-mode pHEMTs using symbolic defined device technology

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