Defect-induced valence instabilities in rare-earth semiconducting compounds

Y. Hammoud; J.C. Parlebas; François Gautier

doi:10.1016/0038-1098(83)90860-8

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Defect-induced valence instabilities in rare-earth semiconducting compounds

Y. Hammoud J.C. Parlebas François Gautier

Year: 1983 Journal: Solid State Communications Vol: 48 (5)Pages: 489-494 Publisher: Elsevier BV

DOI: 10.1016/0038-1098(83)90860-8

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Keywords:

Valence (chemistry) Rare earth Impurity Conduction band Semimetal Condensed matter physics Chemistry Crystallographic defect Cluster (spacecraft) Chemical physics Phase diagram Electron Materials science Crystallography Band gap Physics Phase (matter) Mineralogy

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Rare-earth and actinide compounds

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Advanced Chemical Physics Studies

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Inorganic Chemistry and Materials

Physical Sciences → Chemistry → Inorganic Chemistry

Defect-induced valence instabilities in rare-earth semiconducting compounds

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